ALD114935 Datasheet PDF | Advanced Linear Devices

Advanced Linear Devices ALD114935

The ALD114835/ALD114935 are suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. For most applications, connect the V+ pin to the most positive voltage and the V- and IC pins to the most negative voltage in the system.

Part No.	ALD114935
Datasheet	ALD114935 Download
Manufacturer	Advanced Linear Devices
Description	QUAD/DUAL N-CHANNEL MOSFET ARRAY
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GENERAL DESCRIPTION

APPLICATIONS

ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS technology. These devices are intended for low voltage, small signal applications. They are excellent functional replacements for normally-closed relay applications, as they are normally on (conducting) without any power applied, but could be turned off or modulated when system power supply is turned on. These MOSFETs have the unique characteristics of, when the gate is grounded, operating in the resistance mode for low drain voltage levels and in the current source mode for higher voltage levels and providing a constant drain current. ALD114835/ALD114935 MOSFETs are designed for exceptional device electrical characteristics matching. As these devices are on the same monolithic chip, they also exhibit excellent temperature tracking characteristics. They are versatile as design components for a broad range of an...