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ALD210800A - PRECISION N-CHANNEL EPAD MOSFET ARRAY

Download the ALD210800A datasheet PDF. This datasheet also covers the ALD210800 variant, as both devices belong to the same precision n-channel epad mosfet array family and are provided as variant models within a single manufacturer datasheet.

General Description

The ALD210800A/ALD210800 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology.

Key Features

  • Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. For example, a nanopower input amplifier stage operating at less than 0.2V supply voltage has been successfully built with these devices. ALD210800A EPAD MOSFETs feature exceptional matched pair device electrical characteristics of G.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ALD210800_AdvancedLinearDevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ALD210800A
Manufacturer Advanced Linear Devices
File Size 514.16 KB
Description PRECISION N-CHANNEL EPAD MOSFET ARRAY
Datasheet download datasheet ALD210800A Datasheet

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Other Datasheets by Advanced Linear Devices

Part Number Description
ALD210800 PRECISION N-CHANNEL EPAD MOSFET ARRAY
ALD210802 MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD210800A/ALD210800 PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR VGS(th)= +0.00V GENERAL DESCRIPTION The ALD210800A/ALD210800 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110800A/ ALD110800 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD210800A/ ALD210800 features Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges.