Datasheet Details
| Part number | AM28F256 |
|---|---|
| Manufacturer | Advanced Micro Devices |
| File Size | 257.72 KB |
| Description | 256 Kilobit CMOS 12.0 Volt Bulk Erase Flash Memory |
| Download | AM28F256 Download (PDF) |
|
|
| Part number | AM28F256 |
|---|---|
| Manufacturer | Advanced Micro Devices |
| File Size | 257.72 KB |
| Description | 256 Kilobit CMOS 12.0 Volt Bulk Erase Flash Memory |
| Download | AM28F256 Download (PDF) |
|
|
|
The Am28F256 is a 2
FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption s Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts — 32-pin PDIP — 32-pin PLCC — 32-pin TSOP s 10,000 write/erase cycles minimum s Write and erase voltage 12.0 V ±5% s Latch-up protected to 100 mA from –1 V to VCC +1 V s Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase s Flashrite Programming — 10 µs typical byte-program — 0.
| Part Number | Description |
|---|---|
| Am28F256A | 256 Kilobit CMOS 12.0 Volt Bulk Erase Flash Memory |
| AM28F010 | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory |
| Am28F010A | 1 Megabit CMOS 12.0 Volt Bulk Erase Flash Memory |
| AM28F512 | 512 Kilobit CMOS 12.0 Volt Bulk Erase Flash Memory |
| AM28F512A | 512 Kilobit CMOS 12.0 Volt Bulk Erase Flash Memory |
| AM2169 | 4096 x 4 STATIC R/W RANDOM-ACCESS MEMORY |
| AM27C010 | 1 Megabit (128 K x 8-Bit) CMOS EPROM |
| AM27C020 | 2 Megabit (256 K x 8-Bit) CMOS EPROM |
| AM27C040 | 4 Megabit (512 K x 8-Bit) CMOS EPROM |
| AM27C1024 | 1 Megabit (65 K x 16-Bit) CMOS EPROM |