AM28F512A Datasheet PDF

FINAL Am28F512A 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption s Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts — 32-pin PDIP — 32-pin PLCC — 32-pin TSOP s 100,000 write/erase cycles minimum s Write and erase voltage 12.0 V −5% s Latch-up protected to 100 mA from -1 V to VCC +1 V s Embedded Erase Electrical Bulk Chip-Erase — Two seconds typical chip-erase including pre-programming s Embedded Program — 4 µs typical byte-program including time-out — One second typical chip program s Command register architecture for microprocessor/microcontroller compatible write interface s On-chip address and data latches s Advanced CMOS flash memory technology — Low cost single transistor memory cell s Embedded