3310GH
Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and costeffectiveness. This device is suited for low voltage and battery power applications.
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Rating
- 20 +12 -10 -6.2 -24 25 0.01 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 5.0 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
1 200808155
AP3310GH/J
Electrical Characteristics@Tj=25o C(unless otherwise specified)
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