4501GSD Overview
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G1 G2 S1 S2 Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 7 5.8 40 2 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -5 -4.2 -30 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter 3 Value Max.
