4501GSD Overview
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. 62.5 Unit ℃/W Data and specifications subject to change without notice 200504042 Datasheet pdf - http://..net/ .DataSheet.co.kr AP4501GSD N-CH @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test...
