50G60SW - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

Advanced Power Electronics

Part number	50G60SW
Manufacturer	Advanced Power Electronics
File Size	91.84 KB
Description	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	50G60SW Datasheet
Additional preview pages of the 50G60SW datasheet.

▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ. =2.6V@IC=33A ▼ Built-in Fast Recovery Diode G C E C VCES IC TO-3P G Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM IF@TC=25oC IF@TC=100oC PD@TC=25oC TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Rang.

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Published: Mar 12, 2017 |