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50G60SW - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Summary

Features

  • ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ. =2.6V@IC=33A ▼ Built-in Fast Recovery Diode G C E C VCES IC TO-3P G Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM IF@TC=25oC IF@TC=100oC PD@TC=25oC TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Rang.

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Datasheet Details

Part number 50G60SW
Manufacturer Advanced Power Electronics
File Size 91.84 KB
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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    Advanced Power Electronics Corp. AP50G60SW RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ.=2.6V@IC=33A ▼ Built-in Fast Recovery Diode G C E C VCES IC TO-3P G Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM IF@TC=25oC IF@TC=100oC PD@TC=25oC TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds .
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