88N30W-HF-3
Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness. The AP88N30W-HF-3 is in the TO-3P through-hole package which is widely used in higher power mercial and industrial applications where an attached heatsink is required. This device is well suited for use in applications such as motor drives, inverteers and DC/DC converters.
D (tab)
TO-3P (W)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C IDM IDR IDR(PULSE) PD at TC=25°C IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
Rating 300 ± 30 48 160 48
Units V A A A A W W/°C A m J °C °C
Body-Drain Diode Reverse Drain Current Body-Drain Diode Reverse Drain Peak Current Total Power Dissipation Linear Derating Factor Avalanche Current Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
160 312 2.5 30 45 -55 to 150 -55 to...
