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9915H - AP9915H

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Part Number Description Manufacturer
9918H N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Silicon Standard

Other Datasheets by Advanced Power Electronics Corp

Part Number Description
9916H AP9916H
9916H AP9916H
9918H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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www.DataSheet4U.com AP9915H/J N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Single Drive Requirement G S D BVDSS RDS(ON) ID 20V 50mΩ 20A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 20 ± 12 20 16 41 26 0.