9T15GH Datasheet | Advanced Power Electronics Corp

Description The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current Rating 20 ±16 12.5 8 60 12.5 0.1 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 10 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200908052-1/4 AP9T15GH/J Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) .. VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250u A Min. 20 0.5 Typ. 0.02 10 5 1 2 8 55 10 3 360 70 50 1.67 Max. Units 50 80 1.5 1 25 ±100 8 580 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Ω o Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1m A Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150o C) o VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A VDS=VGS, ID=250u A VDS=5V, ID=10A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS=±16V ID=10A VDS=16V VGS=4.5V VDS=10V ID=10A RG=3.3Ω,VGS=5V RD=1Ω VGS=0V VDS=20V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Source-Drain Diode Symbol VSD Parameter...