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AP02N60H-H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters.

The through-hole version (AP02N60J-H) is available for low-profile applications.

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Datasheet preview – AP02N60H-H

Datasheet Details

Part number AP02N60H-H
Manufacturer Advanced Power Electronics
File Size 239.79 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP02N60H-H Datasheet
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Full PDF Text Transcription

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AP02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 700V 8.8Ω 1.4A Description G D The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J-H) is available for low-profile applications. G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 +30 1.4 0.9 5.6 39 0.
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