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AP02N60H-H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters.

The through-hole version (AP02N60J-H) is available for low-profile applications.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP02N60H-H-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP02N60H-H-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP02N60H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 700V 8.8Ω 1.4A Description G D The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J-H) is available for low-profile applications. G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 +30 1.4 0.9 5.6 39 0.