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AP02N70EI - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness.

The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.

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Other Datasheets by Advanced Power Electronics Corp

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AP02N70EI-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP02N70EI RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ ESD Improved Capability ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 700V 7Ω 1.6A S Description AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 ±20 1.6 1 6.4 27.