Datasheet4U Logo Datasheet4U.com

AP02N70EI - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness.

The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.

📥 Download Datasheet

Datasheet preview – AP02N70EI

Datasheet Details

Part number AP02N70EI
Manufacturer Advanced Power Electronics
File Size 124.12 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP02N70EI Datasheet
Additional preview pages of the AP02N70EI datasheet.

📁 Similar Datasheet

  • AP02N70EJ-HF - N-Channel 700V Power MOSFET (VBsemi)
  • AP0202AT - High-Dynamic Range (HDR) Image Signal Processor (ON Semiconductor)
  • AP01 - 8 Channel Power MOSFET (Supertex Inc)
  • AP0100CS - High-Dynamic Range (HDR) Image Signal Processor (Aptina)
  • AP0100CS - High-Dynamic Range (HDR) Image Signal Processor (ON Semiconductor)
  • AP0101 - High-Dynamic Range (HDR) Image Signal Processor (Aptina)
  • AP0101CS - High-Dynamic Range (HDR) Image Signal Processor (ON Semiconductor)
  • AP0116 - 8 Channel Power MOSFET (Supertex Inc)
  • AP0116NA - 8 Channel Power MOSFET (Supertex Inc)
  • AP0116NB - 8 Channel Power MOSFET (Supertex Inc)
Other Datasheets by Advanced Power Electronics
  • AP02N70EI-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP02N70EJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP02N70EJ-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP02N40H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP02N40H-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP02N40H-HF-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP02N40I-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP02N40J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
AP02N70EI RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ ESD Improved Capability ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 700V 7Ω 1.6A S Description AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 ±20 1.6 1 6.4 27.
Published: |