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AP04N20GK-HF Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

AP04N20 uses rugged design with the best combination of fast switching and cost-effectiveness.

The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package.

Absolute Maximum Ratings http://www.DataSheet4U.net/ Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 3 Rating 200 +20 1 0.8 4 2.7 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 45 Unit ℃/W 1 201010121 Data & specifications subject to change without notice datasheet pdf - http://www.DataSheet4U.net/ AP04N20GK-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=1A VGS=4.5V, ID=0.6A Min.

Overview

AP04N20GK-HF Halogen-Free Product Advanced Power Electronics Corp.

▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 200V 1.