AP10A035MT - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp
General Description
AP10A035 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
Full PDF Text Transcription for AP10A035MT (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AP10A035MT. For precise diagrams, and layout, please refer to the original PDF.
ompliant & Halogen-Free AP10A035MT Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 D1 D2 D2 BVDSS RDS(ON) 100V 35mΩ Description AP10A035 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. PMPAK ® 5x6 dual pad provide superior thermal performance and is design for surface mount applications. S1 G1 S2 G2 S1 G1 S2 G2 D1 D1 D2 D2 PMPAK® 5x6 Absolute Maximum Ratings@Tj=25o.
More Datasheets from Advanced Power Electronics Corp
AP10A035MT Datasheet
