Datasheet Details
| Part number | AP10N70I-A-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 116.60 KB |
| Description | N-Channel MOSFET |
| Datasheet | AP10N70I-A-HF_AdvancedPowerElectronics.pdf |
|
|
Overview: AP10N70I-A-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS pliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 0.
| Part number | AP10N70I-A-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 116.60 KB |
| Description | N-Channel MOSFET |
| Datasheet | AP10N70I-A-HF_AdvancedPowerElectronics.pdf |
|
|
|
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for mercialindustrial through hole applications.
G D S TO-220CFM(I) Absolute Maximum Ratings .DataSheet.co.kr Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 ± 30 10 6.8 40 31.3 2 Units V V A A A W mJ ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 50 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 65 Unit ℃/W ℃/W 1 201204201 Datasheet pdf - http://..net/ Data & specifications subject to change without notice AP10N70I-A-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 3 o Test Conditions VGS=0V, ID=1.0mA VGS=10V, ID=5.0A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=480V, VGS=0V VGS=+30V, VDS=0V ID=10A VDS=480V VGS=10V VDD=300V ID=10A RG=10Ω,VGS=10V RD=30Ω VGS=0V VDS=15V f=1.0MHz f=1.0MHz .DataSheet.co.kr Min.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
AP10N70P-A | N-CHANNEL MOSFET | A-POWER |
|
AP10N70R-A | N-CHANNEL MOSFET | A-POWER |
| Part Number | Description |
|---|---|
| AP10N70I-A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP10N70P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP10N70P-A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP10N70R | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP10N70R-A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP10N70S | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP10N70W | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP10N70W-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP10N60W | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP10NA034MT | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |