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AP1332GEU - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

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Other Datasheets by Advanced Power Electronics Corp

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AP1332GEU-HF N-channel Enhancement mode Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP1332GEU Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Gate Drive ▼ Small Package Outline ▼ 2KV ESD Rating(Per MIL-STD-883D) ▼ RoHS Compliant SOT-323 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S 20V 600mΩ 600mA Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating 20 ±6 600 470 2.5 0.35 0.