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AP15P10GH Datasheet P-channel Enhancement Mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: AP15P10GH/J Pb Free Plating Product Advanced Power Electronics Corp.

General Description

The TO-252 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.

The through-hole version (AP15P10GJ) is available for low-profile applications.

G G D S TO-252(H) D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -100 ±20 -16 -9.8 64 96 0.77 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.

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