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AP1802GU - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The 2021-8 J-lead package provides good on-resistance performance and space saving like SC-70-6.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP1802GU Pb Free Plating Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package D 2021-8 S S S D D G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 32mΩ 5.8A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. D G The 2021-8 J-lead package provides good on-resistance performance and space saving like SC-70-6. S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage www.DataSheet.net/ Rating 20 ±12 5.8 4.7 20 1.6 0.013 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Gate-Source Voltage Continuous Drain Current3, VGS @ 4.