AP18P10GJ Datasheet PDF - Advanced Power Electronics P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specs

AP18P10GJ - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP18P10GJ, a member of the AP18P10GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Datasheet Details

Part number	AP18P10GJ
Manufacturer	Advanced Power Electronics
File Size	170.55 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP18P10GJ Datasheet
Additional preview pages of the AP18P10GJ datasheet.

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Full PDF Text Transcription

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AP18P10GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -100V 180mΩ -12A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18P10GJ) is available for low-profile applications.

Published: Sep 14, 2014 |