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AP18T10GH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
100V 160mΩ 9A
S
Description
G
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18T10GJ) are available for low-profile applications.
AP18T10GJ Datasheet
