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AP18T10GJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

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Datasheet Details

Part number AP18T10GJ
Manufacturer Advanced Power Electronics
File Size 154.56 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription

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AP18T10GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 160mΩ 9A S Description G Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18T10GJ) are available for low-profile applications.
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