AP2304N Datasheet | Advanced Power Electronics Corp

Description SOT-23 The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness. Absolute Maximum Ratings .. Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 Rating 25 ±20 2.7 2.2 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Value Max. 90 Unit ℃/W Data and specifications subject to change without notice Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250u A Min. 25 1 - Typ. 0.1 Max. Units 117 190 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A RDS(ON) VGS=10V, ID=2.5A VGS=4.5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 C) o o VDS=VGS, ID=250u A VDS=4.5V, ID=2.5A VDS=25V, VGS=0V VDS=25V ,VGS=0V VGS=±20V ID=2.5A VDS=15V VGS=10V VDS=15V ID=1A RG=6Ω,VGS=10V RD=15Ω VGS=0V VDS=15V f=1.0MHz 3.4 5.9 0.8 2.1 4.5 11.5 12 3 110 85 39 3 1 10 ±100 10 - Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer...