Datasheet Details
| Part number | AP2314GN-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 91.82 KB |
| Description | N-channel Enhancement mode Power MOSFET |
| Download | AP2314GN-HF Download (PDF) |
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| Part number | AP2314GN-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 91.82 KB |
| Description | N-channel Enhancement mode Power MOSFET |
| Download | AP2314GN-HF Download (PDF) |
|
|
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Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-23 package is widely used for commercial-industrial applications.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 20 +12 3.5 2.8 10 0.83 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 150 Unit ℃/W 1 201006214 Data and specifications subject to change without notice AP2314GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ∆BVDSS/∆Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=3.5A VGS=2.5V, ID=1.2A VDS=VGS, ID=250uA VDS=5V, ID=3A VDS=20V, VGS=0V VGS=+12V, VDS=0V ID=3A VDS=16V VGS=4.5V VDS=15V ID=1A RG=3.3Ω,VGS=5V RD=15Ω VGS=0V VDS=20V f=1.0MHz f=1.0MHz Min.
AP2314GN-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package ▼ RoHS Compliant & Halogen-Free S SOT-23 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 75mΩ 3.
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