Datasheet Details
| Part number | AP2325GEN-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 80.34 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2325GEN-HF_AdvancedPowerElectronics.pdf |
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Overview: AP2325GEN-HF Halogen-Free Product Advanced Power Electronics Corp.
| Part number | AP2325GEN-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 80.34 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2325GEN-HF_AdvancedPowerElectronics.pdf |
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Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching,low on-resistance and cost-effectiveness.
The SOT-23 package is widely preferred for mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating - 20 +12 -3 -2.4 -12 1.25 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 100 Unit ℃/W 1 201112071 Data and specifications subject to change without notice Free Datasheet http://../ AP2325GEN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-3A VGS=-2.5V, ID=-2A Min.
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