Datasheet Details
| Part number | AP2342GK-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 81.62 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2342GK-HF_AdvancedPowerElectronics.pdf |
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Overview: AP2342GK-HF Halogen-Free Product Advanced Power Electronics Corp.
| Part number | AP2342GK-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 81.62 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2342GK-HF_AdvancedPowerElectronics.pdf |
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Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 3 Rating 60 +20 590 470 1.6 1.38 -55 to 150 -55 to 150 Units V V mA mA A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W 1 201111251 Data and specifications subject to change without notice Free Datasheet http://../ AP2342GK-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=500mA VGS=4.5V, ID=200mA Min.
| Part Number | Description |
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