Datasheet Details
| Part number | AP2603GY-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 57.55 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2603GY-HF-AdvancedPowerElectronics.pdf |
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Overview: AP2603GY-HF Halogen-Free Product Advanced Power Electronics Corp.
| Part number | AP2603GY-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 57.55 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2603GY-HF-AdvancedPowerElectronics.pdf |
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Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.
The SOT-26 package is widely used for all mercial-industrial applications.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating -20 +12 -5 -4 -20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W 1 201208305 Data and specifications subject to change without notice AP2603GY-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-4.5A VGS=-4.5V, ID=-4.2A VGS=-2.5V, ID=-2.0A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | AP2603Y | P CHANNEL ENHANCEMENT MODE POWER MOSFET | ETC |
| Part Number | Description |
|---|---|
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