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AP2604GY-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.

The S0T-26 package is widely used for all commercial-industrial applications.

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Datasheet Details

Part number AP2604GY-HF
Manufacturer Advanced Power Electronics
File Size 92.81 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP2604GY-HF Datasheet
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Full PDF Text Transcription

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AP2604GY-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Fast Switching Characteristic ▼ Lower Gate Charge ▼ Small Footprint & Low Profile Package SOT-26 D D S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G D D 30V 45mΩ 5.5A D ID Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The S0T-26 package is widely used for all commercial-industrial applications. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 30 +20 5.5 4.4 20 2 0.
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