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AP2605GY - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SOT-26 package is universally used for all commercial-industrial applications.

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Other Datasheets by Advanced Power Electronics Corp

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AP2605GY-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP2605GY Pb Free Plating Product Advanced Power Electronics Corp. ▼ Fast Switching Characteristic ▼ Lower Gate Charge ▼ Small Footprint & Low Profile Package D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET S BVDSS RDS(ON) ID G D D -30V 80mΩ - 4A SOT-26 Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ±20 -4 -3.3 -20 2 0.