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AP2608GY - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The S0T-26 package is widely used for commercial-industrial surface mount applications.

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AP2608GY-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP2608GY RoHS-compliant Product Advanced Power Electronics Corp. ▼ Fast Switching Characteristic ▼ Lower Gate Charge ▼ Small Footprint & Low Profile Package D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET S BVDSS RDS(ON) G D 150V 2.6Ω 0.57A ID SOT-26 D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The S0T-26 package is widely used for commercial-industrial surface mount applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 150 +20 0.57 0.45 2 2 0.