Datasheet Details
| Part number | AP2761I-H |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 114.31 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2761I-H_AdvancedPowerElectronics.pdf |
|
|
Overview: AP2761I-H RoHS-pliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS pliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 700V 1.
| Part number | AP2761I-H |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 114.31 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2761I-H_AdvancedPowerElectronics.pdf |
|
|
|
AP2761 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overe voltage surge and sag in the toughest power system with the best bination of fast G D switching,ruggedized design and cost-effectiveness.
S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 +30 6 3.7 24 37 2 Units V V A A A W mJ A ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 18 6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 65 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201002101 Free Datasheet http://../ AP2761I-H Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 3 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=3A VDS=VGS, ID=250uA VDS=10V, ID=4A VDS=600V, VGS=0V VGS=+30V, VDS=0V ID=4A VDS=480V VGS=10V VDD=300V ID=4A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz Min.
| Part Number | Description |
|---|---|
| AP2761I-H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2761I-A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2761I-A-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2761I-A-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2761P-A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2761R-A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2761R-A-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2761S-A-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2762I-A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2762I-A-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |