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AP2763I-A Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: AP2763I-A RoHS-pliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Isolation Full Package ▼ Fast Switching Characteristics G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 750V 1.45Ω 8.

General Description

AP2763 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.

TO-220CFM type provide high blocking voltage to overe voltage surge G and sag in the toughest power system with the best bination of fast D S switching,ruggedized design and cost-effectiveness.

TO-220CFM(I) Absolute Maximum Ratings .DataSheet.co.kr Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 750 ±30 8.0 5.0 30 50 0.4 2 Units V V A A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 32 8.0 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.5 65 Units ℃/W ℃/W Data & specifications subject to change without notice 1 200810233 Datasheet pdf - http://..net/ AP2763I-A Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage 3 Test Conditions VGS=0V, ID=1mA Min.

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