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AP3303H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

The through-hole version (AP3303J) is available for low-profile applications.

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Datasheet Details

Part number AP3303H
Manufacturer Advanced Power Electronics
File Size 105.66 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP3303H/J Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 25V 25mΩ 28A ▼ Fast Switching G S Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3303J) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 25 ± 20 28 18 130 31 0.
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