AP3C035Y - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

AP3C035 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

Advanced Power Electronics

📥 Download Datasheet

Datasheet Details

Part number	AP3C035Y
Manufacturer	Advanced Power Electronics
File Size	141.33 KB
Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP3C035Y Datasheet
Additional preview pages of the AP3C035Y datasheet.

📁 Similar Datasheet

AP3000 - 1/4 INCH DIAPHRAGM VALVE (APTech)
AP3000A-00 - SILICON PIN DIODE CHIP (ASI)
AP3000C-11 - SILICON PIN DIODE (ASI)
AP3001 - PWM BUCK DC-DC CONVERTER (BCD Semiconductor)
AP3002 - 1/4 INCH DIAPHRAGM VALVE (APTech)
AP3003 - BUCK DC-DC CONVERTER (BCD Semiconductor)
AP3005 - 2A 420kHz PWM BUCK DC-DC CONVERTER (BCD Semiconductor)
AP3008 - WHITE LED DRIVER (BCD Semiconductor)
AP3009 - WHITE LED STEP-UP CONVERTER (BCD Semiconductor)
AP300A-00 - SILICON PIN DIODE CHIP (ASI)

Other Datasheets by Advanced Power Electronics

AP30G100W - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120ASW - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120ASW-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP30G120BSW-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120CSW-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120SW - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120W - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G40AEO - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text

Advanced Power Electronics Corp. AP3C035Y Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free 2928-8 G2 S2 G1 S1 Description AP3C035 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 The 2928-8 J-lead package provides good on-resistance G1 performance and space saving like TSOP-6. G2 S1 30V 35mΩ 5A -30V 80mΩ -3.3A D2 S2 Absolute Maximum Ratings@Tj=25oC.

Published: Jul 20, 2025 |