Datasheet Details
| Part number | AP4002I-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 90.79 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4002I-HF-AdvancedPowerElectronics.pdf |
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Overview: AP4002I-HF Halogen-Free Product Advanced Power Electronics Corp.
| Part number | AP4002I-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 90.79 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4002I-HF-AdvancedPowerElectronics.pdf |
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AP4002 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
G DS TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 +30 2 8 20 0.16 2 Units V V A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 20 2 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 6.25 65 Unit ℃/W ℃/W 1 200909013 Data & specifications subject to change without notice AP4002I-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 3 o Test Conditions VGS=0V, ID=1mA VGS=10V, ID=1.0A VDS=VGS, ID=250uA VDS=10V, ID=2.0A VDS=600V, VGS=0V VGS=+30V, VDS=0V ID=2A VDS=480V VGS=10V VDD=200V ID=1A RG=50Ω,VGS=10V RD=200Ω VGS=0V VDS=10V f=1.0MHz Min.
| Part Number | Description |
|---|---|
| AP4002H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002H-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002J | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002J-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002J-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002S | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002T | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002T-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |