AP40N03GS Datasheet | Advanced Power Electronics Corp

Description The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40N03GP) is available for low-profile applications. Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Rating 30 ± 20 40 30 169 50 0.4 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.5 62 Unit ℃/W ℃/W Data & specifications subject to change without notice Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj .. Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250u A Min. 30 1 - Typ. 0.037 Max. Units 17 23 3 1 25 ±100 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=4.5V, ID=16A 14 20 26 17 3 10 7.2 60 22.5 10 800 380 133 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250u A VDS=10V, ID=20A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ± 20V ID=20A VDS=24V VGS=5V VDS=15V ID=20A RG=3.3Ω,VGS=10V RD=0.75Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Forward Leakage Total Gate Charge Gate-Source Charge Gate-Drain...