Datasheet Details
| Part number | AP40T10GH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 56.45 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP40T10GH-HF-AdvancedPowerElectronics.pdf |
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Overview: AP40T10GH-HF Halogen-Free Product Advanced Power Electronics Corp.
| Part number | AP40T10GH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 56.45 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP40T10GH-HF-AdvancedPowerElectronics.pdf |
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Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 ±20 39 27 80 125 -55 to 175 -55 to 175 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.2 110 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200805191 AP40T10GH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=1mA VGS=10V, ID=15A VGS=6V, ID=10A Min.
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