Datasheet4U Logo Datasheet4U.com

AP4407GR - ENHANCEMENT MODE POWER MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AP4405AEN Ultra-Low Power Voltage Detector AKM
AP4409AGEM P-Channel 30V MOSFET VBsemi
AP4410 Mathematical Multiplier ACTION INSTRUMENTS
AP4410A 30V N-Channel Enhancement Mode MOSFET APM
AP4410BEC Ultra Low Power Dual Voltage Detector AKM

Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP4407GM P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4407GM-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4407GM-HF-3 P-channel Enhancement-mode Power MOSFET
AP4407GP-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4407GS-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AP4407GR Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast www.DataSheet4U.com Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 14mΩ -50A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-262(R) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -30 ±25 -50 -32 180 54 0.