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AP4412M
Advanced Power Electronics Corp.
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
G S
25V 33mΩ 7A
Switching
SO-8
S S
Description
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The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
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Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 25 ± 20 7 5.8 30 2.5 0.