AP4412M - ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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AP4412M enhancement mode power mosfet by Advanced Power Electronics Corp - Datasheet Preview

Datasheet Details

Part number	AP4412M
Manufacturer	Advanced Power Electronics Corp
File Size	116.47 KB
Description	ENHANCEMENT MODE POWER MOSFET
Datasheet	AP4412M Datasheet

Other Datasheets by Advanced Power Electronics Corp

Part Number	Description
AP4412GM	ENHANCEMENT MODE POWER MOSFET
AP4410AGM	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4410AGM-HF	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4410GM	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4410GM-HF	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4410GM-HF-3	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4410M	ENHANCEMENT MODE POWER MOSFET
AP4411GM	P-CHANNEL POWER MOSFET
AP4411GM-HF	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4411M	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP4412M Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast www.DataSheet4U.com D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G S 25V 33mΩ 7A Switching SO-8 S S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 25 ± 20 7 5.8 30 2.5 0.