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AP4425GO - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP4425GO RoHS-compliant Product Advanced Power Electronics Corp. ▼ Small & Thin Package ▼ Fast Switching Characteristic ▼ Capable of 1.8V Gate Drive S D D S P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S G S D -20V 42mΩ -4.2A D TSSOP-8 ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 20 ±8 -4.2 -3.3 -30 1 0.