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AP4425GO
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Small & Thin Package ▼ Fast Switching Characteristic ▼ Capable of 1.8V Gate Drive
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P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
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-20V 42mΩ -4.2A
D
TSSOP-8
ID
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
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Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating - 20 ±8 -4.2 -3.3 -30 1 0.