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AP4434GM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Full PDF Text Transcription for AP4434GM (Reference)

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AP4434GM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low on-resistance D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G 20V 18.5mΩ 8.3A D ▼ C...

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EL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G 20V 18.5mΩ 8.3A D ▼ Capable of 2.5V gate drive ▼ Surface mount package ID SO-8 S S S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current ,VGS @ 4.5V Rating 20 ±12 8.3 6.7 30 2 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current ,VGS @ 4.

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