AP4501M Datasheet | Advanced Power Electronics Corp

Description The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 7 5.8 20 2 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -5.3 -4.7 -20 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Max. Value 62.5 Unit ℃/W Data and specifications subject to change without notice .. N-CH Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250u A Min. Typ. Max. Units 30 1 0.02 28 42 3 1 25 - V V/℃ mΩ mΩ V S u A u A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7A VGS=4.5V, ID=5A 13 8.4 2.1 4.7 6 5.2 18.8 4.4 645 150 95 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25o C) Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=250u A VDS=10V, ID=7A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=7A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3Ω,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge ±100 n A Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output...