Datasheet4U Logo Datasheet4U.com

AP4503BGO-HF - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

📥 Download Datasheet

Datasheet preview – AP4503BGO-HF

Datasheet Details

Part number AP4503BGO-HF
Manufacturer Advanced Power Electronics
File Size 89.54 KB
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP4503BGO-HF Datasheet
Additional preview pages of the AP4503BGO-HF datasheet.

📁 Similar Datasheet

  • AP450 - 2 Channel Linear Controller (Anachip)
  • AP4500GM - N- & P-Channel 20V MOSFET (VBsemi)
  • AP4502 - high input select transmitter (Action Instruments)
  • AP4523GH - N- and P-Channel 40V MOSFET (VBsemi)
  • AP4525GEM - N- and P-Channel 30V MOSFET (VBsemi)
  • AP4563GH - Dual-Channel MOSFET (VBsemi)
  • AP4575GM - Dual-Channel MOSFET (VBsemi)
  • AP4580 - MOSFET (ChipSourceTek)
  • AP4580 - MOSFET (ALLPOWER)
  • AP4 - Acorn Pentode (Mullard)
Other Datasheets by Advanced Power Electronics
  • AP4503BGM-HF - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4503AGEM-HF - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4503AGM-HF - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4503AGM-HF-3 - Complementary N and P-channel Enhancement-mode Power MOSFETs
  • AP4503GM-HF - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4503M - POWER MOSFET
  • AP4500GM - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4500GM-HF - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
Advanced Power Electronics Corp. AP4503BGO-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 30V 23mΩ 6.3A -30V 35mΩ -5.2A D2 G1 G2 S1 S2 Absolute Maximum Ratings@Tj=25oC.
Published: |