AP4800M Datasheet | Advanced Power Electronics Corp

Description The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The SO-8 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 25 ± 20 9 7 40 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Value Max. 50 Unit ℃/W Data and specifications subject to change without notice .. Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250u A Min. 25 1 - Typ. 0.037 Max. Units 18 33 3 1 25 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=9A VGS=4.5V, ID=7A VDS=VGS, ID=250u A VDS=15V, ID=10A - Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o VDS=25V, VGS=0V VDS=20V, VGS=0V VGS= ± 20V ID=9A VDS=15V VGS=5V VDS=15V ID=1A RG=6.2Ω,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate...