Datasheet Details
| Part number | AP4953D |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 105.04 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP4953D Download (PDF) |
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| Part number | AP4953D |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 105.04 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP4953D Download (PDF) |
|
|
|
D1 D2 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 30 ±20 -5 -4 - 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max.
62.5 Unit ℃/W Data and specifications subject to change without notice 200922031 www.DataSheet4U.com AP4953D Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA Min.
www.DataSheet4U.com AP4953D Advanced Power Electronics Corp.
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|---|---|
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