AP4957M datasheet by Advanced Power Electronics Corp.
| Part number | AP4957M |
|---|---|
| Datasheet | AP4957M_AdvancedPowerElectronics.pdf |
| File Size | 100.01 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 62.5 Unit ℃/W Data and specifications subject to change without notice 200420041 .. AP4957M @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min.
View all Advanced Power Electronics Corp datasheets
| Part Number | Description |
|---|---|
| AP4957AGM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4957AGM-HF | DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4957GM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4957GM-HF | DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4951GM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4951GM-HF | DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4951GM-HF-3 | Dual P-channel Enhancement-mode Power MOSFETs |
| AP4953D | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4953GM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4953GM-HF | DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
