Datasheet4U Logo Datasheet4U.com

AP4961GM - DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.

📥 Download Datasheet

Datasheet preview – AP4961GM

Datasheet Details

Part number AP4961GM
Manufacturer Advanced Power Electronics
File Size 54.64 KB
Description DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP4961GM Datasheet
Additional preview pages of the AP4961GM datasheet.

📁 Similar Datasheet

  • AP4936M - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Technology)
  • AP494 - VOLTAGE MODE PWM CONTROLLER (Etc)
  • AP4 - Acorn Pentode (Mullard)
  • AP400-B10 - AC Current transducer AP-B10 (LEM)
  • AP400-B420L - AC Current transducer AP-B420L (LEM)
  • AP400N08TLG1 - 85V N-Channel Enhancement Mode MOSFET (APM)
  • AP4010 - High Performance IR Enhanced P-Type Silicon Photodiodes (Antel Optronics)
  • AP4025 - High Performance IR Enhanced P-Type Silicon Photodiodes (Antel Optronics)
  • AP4048 - Cascadable Amplifiers (Cougar Components)
  • AP4048 - 1000 TO 4000 MHz TO-8 & TO-8B CASCADABLE AMPLIFIERS (ETC)
Other Datasheets by Advanced Power Electronics
  • AP4963GEM-HF - DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4920GM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4920GM-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4920M - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4924M - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4951GM - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4951GM-HF - DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4951GM-HF-3 - Dual P-channel Enhancement-mode Power MOSFETs

Full PDF Text Transcription

Click to expand full text
Advanced Power Electronics Corp. AP4961GM RoHS-compliant Product DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Dual P MOSFET Package D2 D2 D1 D1 SO-8 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. G2 S2 G1 S1 G1 BVDSS RDS(ON) ID D1 G2 S1 -20V 28mΩ -7A D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating -20 +8 -7 -5.
Published: |