AP50G60SW-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics Corp

Key Features

Datasheet Details

Part number	AP50G60SW-HF
Manufacturer	Advanced Power Electronics Corp
File Size	150.73 KB
Description	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	AP50G60SW-HF Datasheet

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AP50G60SW-HF Halogen-Free Product Advanced Power Electronics Corp. Features N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR C ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ.=2.6V@IC=33A ▼ Built-in Fast Recovery Diode ▼ RoHS Compliant & Halogen-Free VCES IC 600V 45A C G C E TO-3P G E Absolute Maximum Ratings Symbol VCES VGE IC@TC=25oC IC@TC=100oC ICM IF@TC=25oC IF@TC=100oC PD@TC=25oC TSTG TJ TL Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds .