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AP60L02GP - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number AP60L02GP
Manufacturer Advanced Power Electronics
File Size 117.50 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP60L02GP Datasheet
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Full PDF Text Transcription

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AP60L02GS/P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ www.DataSheet4U.com ▼ Fast Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 12mΩ 50A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60L02GP) is available for low-profile applications. G D G D S TO-263(S) TO-220(P) S Rating 25 ± 20 50 32 180 62.5 0.
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