Datasheet4U Logo Datasheet4U.com

AP6618M - N-Channel MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AP66200 2A LOW IQ SYNCHRONOUS BUCK CONVERTER DIODES
AP66200Q 2A LOW IQ SYNCHRONOUS BUCK CONVERTER DIODES
AP66300 3A LOW IQ SYNCHRONOUS BUCK CONVERTER DIODES
AP66300Q 3A LOW IQ SYNCHRONOUS BUCK CONVERTER DIODES
AP6679BGM P-Channel 30V MOSFET VBsemi

Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP6618GM-HF POWER MOSFET
AP6618GM-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP6677GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP6677GH-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP6679BGH-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AP6618M Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Fast Switching Speed ▼ Surface Mount Package D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G 30V 30mΩ 7A ID SO-8 S S S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ± 20 7 5.8 30 2.5 0.