AP6679BGJB-HF - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp
General Description
AP6679B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
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Advanced Power Electronics Corp.
AP6679BGJB-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
G
S
Description
AP6679B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted.
BVDSS RDS(ON) ID
-30V 9mΩ -63A
GD S
TO-251S(JB)
Absolute Maximum Ratings@Tj=25oC.
AP6679BGJB-HF Datasheet
