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AP6679BGJB-HF - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP6679B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number AP6679BGJB-HF
Manufacturer Advanced Power Electronics
File Size 59.57 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP6679BGJB-HF Datasheet
Additional preview pages of the AP6679BGJB-HF datasheet.

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Full PDF Text Transcription

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Advanced Power Electronics Corp. AP6679BGJB-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S Description AP6679B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted. BVDSS RDS(ON) ID -30V 9mΩ -63A GD S TO-251S(JB) Absolute Maximum Ratings@Tj=25oC.
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