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AP6679GJ - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP6679GJ, a member of the AP6679GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

The through-hole version (AP6679GJ) is available for low-profile applications.

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Datasheet preview – AP6679GJ

Datasheet Details

Part number AP6679GJ
Manufacturer Advanced Power Electronics
File Size 237.87 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP6679GJ Datasheet
Additional preview pages of the AP6679GJ datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com AP6679GH/J RoHS-compliat Product Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 9mΩ -75A Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications. G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 Rating -30 +25 -75 -50 -300 89 0.
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